Incluye bibliografía al final de cada capítulo e índice analítico.

1. Introduction to nanoionic elements for information technology / Rainer Waser, Daniele Ielmini, Hiro Akinaga, Hisashi Shima, H.-S. Philip, Wong, Joshua J. Yang, and Simon Yu -- 2. ReRAM Cells in the framework of two-terminal devices / E. Linn, M. Di Ventra, and Y. V. Pershin -- 3. Atomic and electronic structure of oxides / Tobias Zacherle, Peter C. Schmidt, and Mandfred Martin -- 4. Defect structure of metal oxides / Giuliano Gregori -- 5. Ion transport in metal oxides / Roger A. De Souza -- 6. Electrical transport in transition metal oxides / Franklin J. Wong and Shriram Ramanathan -- 7. Quantum point contact conduction / Jan van Ruitenbeek, Monica Morales Masis, and Enrique Miranda -- 8. Dielectric breakdown process / Jordi Suñé, Nagarajan Raghavan, and K. L. Pey -- 9. Physics and chemistry of nanoionic cells / Ilia Valov and Rainer Waser -- 10. Electroforming processes in metal oxide resistive-switching cells / Doo Seok Jeong, Byung Joon Choi, Cheol Seong Hwang -- 11. Universal switching behavior / Daniele Ielmini and Stephan Menzel -- 12. Quasitastic and pulse measuring techniques / Antonio Torrezan, Gilberto Mederiros-Ribeiro, and Stephan Tiedke -- 13. Unipolar resistive-switching mechanisms / Ludovic Goux and Sabina Spiga -- 14. Modeling the VCM- and ECM-Type Switching Kinetics / Stephan Menzel and Ji-Hyun Hur -- 15. Valence change observed by nanospectroscopy / Christian Lenser, Regina Dittmann, and John Paul Strachan -- 16. Interface-type switching / Akihito Sawa and Rene Meyer -- 17. Electrochemical metallization memories / Michael N. Kozicki, Maria Mitkova, and Ilia Valov -- 18. Atomic Switches / Kazuya Terabe, Tohru Tsuruoka, Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Tomonobu Nakayama, and Masakazu Aono -- 19. Scaling limits of nanoionic devices / Victor Zhirnov and Gurtej Sandhu -- 20. Integration technology and cell design / Fred Chen, Jun Y. Seok, and Cheol S. Hwang -- 21. Reliability aspects / Dirk J. Wouters, Yang-Yin Chen, Andrea Fantini, and Nagarajan Raghavan -- 22. Select device concepts for crossbar arrays / Geoffrey W. Burr, Rohit S. Shenoy, and Hyunsang Hwang -- 23. Bottom-up approaches for resistive switching memories / Sabina Spiga, Takeshi Yanagida, and Tomoji Kawai -- 24. Switch application in FPGA / Toshitsugu Sakamoto, S. Simon Wong, and Young Yang Liauw -- 25. ReRAM-based neuromorphic computing / Giacomo Indiveri, Eike Linn, and Stefano Ambrogio.