Resistive switching :  from fundamentals of nanionic redox processes to memristive device applications /  
edited by Daniele Ielmini and Rainer Waser. 
 - Weinheim, Germany :  Wiley-VCH,  c2016. 
 - xviii, 755 p. :  il. (principalmente col.), diagrs. ;  24 cm. 
<br/><br/>Incluye bibliografía al final de cada capítulo e índice analítico. 
<br/><br/> 1. Introduction to nanoionic elements for information technology /  2. ReRAM Cells in the framework of two-terminal devices /  3. Atomic and electronic structure of oxides /  4. Defect structure of metal oxides /  5. Ion transport in metal oxides /  6. Electrical transport in transition metal oxides /  7. Quantum point contact conduction /  8. Dielectric breakdown process /  9. Physics and chemistry of nanoionic cells /  10. Electroforming processes in metal oxide resistive-switching cells /  11. Universal switching behavior /  12. Quasitastic and pulse measuring techniques /  13. Unipolar resistive-switching mechanisms /  14. Modeling the VCM- and ECM-Type Switching Kinetics /  15. Valence change observed by nanospectroscopy /  16. Interface-type switching /  17. Electrochemical metallization memories /   18. Atomic Switches /  19. Scaling limits of nanoionic devices /  20. Integration technology and cell design /  21. Reliability aspects /  22. Select device concepts for crossbar arrays /  23. Bottom-up approaches for resistive switching memories /  24. Switch application in FPGA /  25. ReRAM-based neuromorphic computing /  Rainer Waser, Daniele Ielmini, Hiro Akinaga, Hisashi Shima, H.-S. Philip, Wong, Joshua J. Yang, and Simon Yu --  E. Linn, M. Di Ventra, and Y. V. Pershin --  Tobias Zacherle, Peter C. Schmidt, and Mandfred Martin --  Giuliano Gregori --  Roger A. De Souza --  Franklin J. Wong and Shriram Ramanathan --  Jan van Ruitenbeek, Monica Morales Masis, and Enrique Miranda --  Jordi Suñé, Nagarajan Raghavan, and K. L. Pey --  Ilia Valov and Rainer Waser --  Doo Seok Jeong, Byung Joon Choi, Cheol Seong Hwang --   Daniele Ielmini and Stephan Menzel --  Antonio Torrezan, Gilberto Mederiros-Ribeiro, and Stephan Tiedke --  Ludovic Goux and Sabina Spiga --  Stephan Menzel and Ji-Hyun Hur --  Christian Lenser, Regina Dittmann, and John Paul Strachan --  Akihito Sawa and Rene Meyer --  Michael N. Kozicki, Maria Mitkova, and Ilia Valov --  Kazuya Terabe, Tohru Tsuruoka, Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Tomonobu Nakayama, and Masakazu Aono --  Victor Zhirnov and Gurtej Sandhu --  Fred Chen, Jun Y. Seok, and Cheol S. Hwang --  Dirk J. Wouters, Yang-Yin Chen, Andrea Fantini, and Nagarajan Raghavan --  Geoffrey W. Burr, Rohit S. Shenoy, and Hyunsang Hwang --  Sabina Spiga, Takeshi Yanagida, and Tomoji Kawai --  Toshitsugu Sakamoto, S. Simon Wong, and Young Yang Liauw --  Giacomo Indiveri, Eike Linn, and Stefano Ambrogio. 
<br/><br/><label>ISBN: </label>9783527334179 
<br/><br/><label>Subjects--Topical Terms: </label><br/>NANOTECNOLOGIA<br/>NANOELECTRONICA<br/>CIRCUITOS ELECTRONICOS<br/>CIRCUITOS DE CONMUTACION<br/>CONDUCTIVIDAD ELECTRICA<br/>MEMORIAS<br/>DISPOSITIVOS DE MEMORIAS DE CAPA DELGADA<br/>MEMORIAS MAGNETICAS<br/>MEMORIAS DE SEMICONDUCTORES<br/>MATERIALES<br/>INGENIERIA ELECTRICA<br/>FISICA DEL ESTADO SOLIDO
<br/><br/><label>Subjects--Index Terms: </label>Materia condensada  ReRAM 
<br/><br/><label>Universal Decimal Class. No.: </label>620.3